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电源设计 － PFC升压电感
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输入数据 |
Lb= |
83.0 |
uH |
电感 |
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Ibpkx= |
26.8 |
Apk |
电感最大峰值电流 |
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Ibppx= |
8.8 |
App |
最大峰峰电流 |
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Iinn= |
12.2 |
Arms |
额定输入电流rms值 |
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Iblacn= |
2.0 |
Arms |
升压电感平均纹波电流rms值 |
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fpfc= |
140 |
kHz |
PFC开关频率 |
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Icd= |
6.0 |
A/mm2 |
电流密度 |
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Smp= |
1.3 |
mm |
安全裕度，主级/高频绕组，mm |
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Sms= |
1.3 |
mm |
安全裕度，次级/低频绕组，mm |
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Whm= |
7.1 |
mm |
最小绕组高度，mm |
E42/21/20 |
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Wwm= |
25.5 |
mm |
最小绕组宽度，mm |
E42/21/20 |
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Ht= |
20.0 |
mm |
磁芯高度或"C"尺寸 |
E42/21/20 |
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Ltm= |
75.5 |
mm |
最小匝长 |
E42/21/20 |
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le= |
98.4 |
mm |
磁路长度 |
E42/21/20 |
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Ae= |
237 |
mm2 |
磁芯面积，有效值 |
E42/21/20 |
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Am= |
237 |
mm2 |
磁芯面积，最小值 |
E42/21/20 |
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Vm= |
23,300 |
mm3 |
磁体积 |
E42/21/20 |
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ur= |
40 |
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u, 无隙磁芯,
无直流偏置 |
K40 |
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Bmax= |
1.00 |
T |
最大磁通密度@130℃ |
K40 |
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uh= |
67.0 |
% |
穿透性 @ Hpk |
K40 |
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ncpfc= |
1 |
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磁芯片数 |
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中间数据 |
Ltm= |
75.5 |
mm |
最小匝长，ncpfc片 |
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Ltn= |
103.9 |
mm |
平均匝长，ncpfc片 |
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Aet= |
237 |
mm2 |
磁芯面积，有效值，ncpfc片 |
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Amt= |
237 |
mm2 |
磁芯面积，最小值，ncpfc片 |
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Vmt= |
23,300 |
mm3 |
磁体积，ncpfc片 |
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Vc= |
16,675 |
mm3 |
铜体积 |
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Vt= |
39,975 |
mm3 |
总的电感体积 |
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ALc= |
10.9 |
nH/T2 |
AL, 仅线圈 |
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ALo= |
121.1 |
nH/T2 |
AL, 无隙磁芯,
无直流偏置, 一片 |
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ALot= |
121.1 |
nH/T2 |
AL, 无隙磁芯,
无直流偏置, 片 |
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AL= |
81.1 |
nH/T2 |
AL, 无隙磁芯,
偏置@ Hpk, ncpfc片 |
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ALg= |
81.1 |
nH/T2 |
需要的芯铝，气隙，偏置@ Hpk |
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L0= |
11.19 |
uH |
电感，无磁芯 |
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Lb0= |
135.16 |
uH |
零偏置电感，无气隙，测试值 |
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输出数据 |
Nbmin= |
9.4 |
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最小匝数 |
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Nb= |
32.0 |
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选择的匝数 |
> 1.2 x Nbmin |
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Bpk= |
0.29 |
T |
实际的峰值磁通密度 |
OK |
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Gap0= |
0.00 |
mm |
磁芯气隙，无叉指效应 |
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Gap= |
0.00 |
mm |
磁芯气隙，接近真实情况 |
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dBpk= |
48 |
mT |
B峰峰范围的一半 |
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Hpksi= |
7,288 |
A/m |
磁感应强度，SI |
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Hpku= |
92 |
Oe |
磁感应强度，USA |
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PFC电感芯损 |
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中间数据 |
P3= |
19 |
mW/cm3 |
Philips Ferrite 3F3 材料 |
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Pml= |
137 |
mW/cm3 |
Allied Signal MicroLite 245 材料 |
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Pm60= |
127 |
mW/cm3 |
Magnetics MPP 60u 材料 |
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Pm125= |
222 |
mW/cm3 |
Magnetics MPP 125u 材料 |
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Pk= |
312 |
mW/cm3 |
Magnetics Kool-Mu 材料 |
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Ppl= |
391 |
mW/cm3 |
Allied Signal PowerLite 材料 |
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Phf= |
606 |
mW/cm3 |
Magnetics High Flux 60u 材料 |
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P18= |
1043 |
mW/cm3 |
Micrometals Iron Powder 18 材料 |
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Rthm= |
7.71 |
℃/W |
Rth, 环形,
开环，自然对流 |
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Kwpfc= |
0.79 |
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额定平均/峰值芯损 |
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输出数据 |
P3= |
0.4 |
W |
3F3 |
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Pml= |
2.5 |
W |
MicroLite 245 |
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Pm60= |
2.3 |
W |
MPP 60u |
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Pm125= |
4.1 |
W |
MPP 125u |
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Pk= |
5.7 |
W |
Kool-Mu |
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Ppl= |
7.2 |
W |
PowerLite |
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Phf= |
11.2 |
W |
High Flux 60u |
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P18= |
19.2 |
W |
Iron Powder 18 |
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dT3= |
3 |
℃ |
磁芯温升, 3F3 |
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dTml= |
19 |
℃ |
磁芯温升, MicroLite 245 |
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dTm60= |
18 |
℃ |
磁芯温升, MPP 60u |
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dTm125= |
31 |
℃ |
磁芯温升, MPP 125u |
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dTk= |
44 |
℃ |
磁芯温升, Kool-Mu |
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dTpl= |
55 |
℃ |
磁芯温升, PowerLite |
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dThf= |
86 |
℃ |
磁芯温升, High Flux 60u |
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dT18= |
148 |
℃ |
磁芯温升, Iron Powder 18 |
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PFC电感铜损 |
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中间数据 |
Dpenm= |
0.213 |
mm |
穿透深度, mm |
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Dpen= |
8.4 |
mil |
穿透深度, mil |
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Sml= |
52 |
mil |
安全裕度,
低频绕组, mil |
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Smh= |
52 |
mil |
安全裕度,
高频绕组, mil |
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Ww= |
1.004 |
inch |
可用的绕组宽度 |
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Ltl= |
4.091 |
inch |
平均匝长，低频绕组 |
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Lth= |
4.091 |
inch |
平均匝长，高频绕组 |
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Wal= |
0.900 |
inch |
低频绕组的绕组宽度 |
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Waf= |
0.900 |
inch |
高频绕组的绕组宽度 |
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Dlf1= |
3.5 |
mil |
电流密度需要的低频绕组的厚度 |
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Dlfc= |
5.0 |
mil |
选定的低频绕组的厚度 |
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Dlf2= |
5.7 |
mil |
绕组高度限制的低频绕组的厚度 |
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Alf= |
2.90 |
mm2 |
低频绕组的截面积 |
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Dhf= |
0.714 |
mm |
高频绕组导线直径 |
x 1 |
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Dhfc= |
0.127 |
mm |
选定的高频绕组导线直径 |
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Ahfc= |
2.903 |
mm2 |
选定的高频绕组的截面积 |
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Qs= |
0.60 |
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高频绕组的层厚/穿透深度 |
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Pb= |
32.0 |
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每个绕组部分的层数 |
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Frb= |
15.40 |
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高频绕组的Rac/Rdc比 |
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Tc= |
125.0 |
℃ |
实际的铜的温度 |
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输出数据 |
Pbicrl= |
5.7 |
W |
磁芯功耗，Kool-Mu |
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Pgap= |
0.0 |
W |
气隙引起的损失 |
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Rdclf= |
31.77 |
mOhm |
DC阻抗，低频绕组 |
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Rdchf= |
28.62 |
mOhm |
DC阻抗，高频绕组 |
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Rachf= |
460.8 |
mOhm |
AC阻抗，高频绕组 |
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Pbilfl= |
4.8 |
W |
低频绕组铜损 |
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Pbihfl= |
1.8 |
W |
高频绕组铜损 |
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Pbitcpl= |
6.6 |
W |
总的铜损 |
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Pbitl= |
12.4 |
W |
电感总功耗 |
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Rth= |
5.8 |
℃/W |
Rth, 环形，开环，自然对流 |
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dT3= |
71 |
℃ |
自然对流时的温升 |
仅供对比用 |
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| 对于功率磁器件（升压电感，功率变压器和输出电感）我们建议使用H(180℃)级。 |
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| 芯损计算中假设磁芯工作温度为100℃
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| 在 80-90℃时损耗最小。 |
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| 磁芯工作温度的最大值应 <160℃
(Tc=200℃-40℃ 裕度)。 |
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| 磁芯功耗计算公式的精度可达到 ±10%。 |
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| 温升计算公式的精度可达到±30%。 |
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| 温升为自然对流冷却方式下的。 |
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| 根据空气流动的情况，强制（风扇）冷却下的温升可为1/2到1/3。 |
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| SMPS电源公司 |
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| 只做正确的事就是最需要做的事™ |
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| www.PowerSupplies.net |
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| www.GoToPower.net |
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| 版权所有©1998-2005 SMPS Power Supplies,
Inc. 保留所有权利 |
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| 版权所有©1990-1997 LCD Consulting |
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| 版权所有©1979-1989 Constantin Darius Livescu |
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欢迎评论和建议。查看完整的电子表格: ADH2450Deszg.xls
版权所有©1998-2005
SMPS电源公司.
保留所有权利
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