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电源设计 － 功率损耗计算
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输入数据 |
Vinn= |
230.0 |
Vrms |
额定交流输入电压 |
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Iinn= |
12.24 |
Arms |
额定rms输入电流 |
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Irpkn= |
17.32 |
Apk |
额定峰值整流电流 |
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Iravgn= |
11.02 |
Aavg |
额定平均整流电流 |
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Ibpkn= |
20.13 |
Apk |
升压电感、开关和二极管的额定平均峰值电流 |
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Ibacn= |
2.00 |
Arms |
升压电感额定纹波rms电流 |
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PF= |
0.9993 |
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估计输入满负载功率因数 |
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Voutn= |
27.22 |
Vdc |
额定直流输出电压 |
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Ioutn= |
90.00 |
Adc |
额定输出电流 |
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Pomax= |
2,450 |
W |
直流/直流阶的最大输出功率 |
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Iaux= |
56 |
mA |
辅助电源电流 |
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Tamb= |
50.0 |
℃ |
最大环境温度 |
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输出数据 |
Pin= |
2,814 |
W |
输入有功功率 |
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Ppfc= |
2,689 |
W |
PFC阶的最大输出功率 |
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Pinl= |
35.5 |
W |
输入阶总功率损耗 |
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Ppfcl= |
89.5 |
W |
PFC阶总损耗 |
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Pdcl= |
60.7 |
W |
直流/直流阶总损耗 |
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Poutl= |
156.1 |
W |
输出阶总损耗 |
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Paul= |
22.8 |
W |
辅助电路损耗 |
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Pm= |
39.9 |
W |
磁性器件总损耗 |
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Ps= |
243.6 |
W |
半导体器件总损耗 |
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Ptl= |
364.6 |
W |
总功率损耗 |
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Effpfc= |
95.56 |
% |
PFC (+ 输入阶, +
辅助电路)效率 |
测量: XX.X % |
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Effdc= |
91.87 |
% |
直流/直流 (+
输出阶)效率 |
测量: YY.Y % |
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Eff= |
87.04 |
% |
总效率 |
测量: ZZ.Z % |
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输入阶损耗估算 |
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输入数据 |
Rif= |
2.00 |
mOhm |
输入保险的直流电阻 |
20A/250V/S/HC(*2) |
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Ricm1= |
7.57 |
mOhm |
输入CM电感器1的直流电阻 |
1mH (*2) |
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Ricm2= |
7.57 |
mOhm |
输入CM电感器2的直流电阻DC |
1mH (*2) |
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Ridm= |
17.17 |
mOhm |
输入DM电感器的直流电阻DC |
30uH (*2) |
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Rbinlf= |
19.10 |
mOhm |
低频PCB交流输入路径 |
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Vidb= |
0.89 |
V |
在Iinnpk时单管输入桥的电压降 |
1/4*D25XB60, 典型值 |
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Visb= |
0.89 |
V |
在Iinnpk时SCR输入桥的电压降 |
1/4*D25XB60, 典型值 |
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Rdthjc= |
2.00 |
℃/W |
输入二极管结到外壳的热阻 |
1/2*D25XB60 |
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Rdthcs= |
0.22 |
℃/W |
二极管散热器的热阻 |
1/2*D25XB60 |
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Rsthjc= |
2.00 |
℃/W |
输入SCR结到外壳的热阻 |
1/2*D25XB60 |
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Rsthcs= |
0.22 |
℃/W |
SCR散热器的热阻 |
1/2*D25XB60 |
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Tidjx= |
125 |
℃ |
输入二极管的最大结温 |
D25XB60 |
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Tidj= |
125 |
℃ |
输入二极管的实际结温 |
估计 |
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Tisjx= |
125 |
℃ |
输入SCR的最大结温 |
D25XB60 |
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Tisj= |
125 |
℃ |
输入SCR的实际结温 |
估计 |
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输出数据 |
Pif= |
0.6 |
W |
输入保险的功率损耗 |
2*MDA-V-20 |
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Picm1= |
2.3 |
W |
输入CM电感1的功率损耗 |
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Picm2= |
2.3 |
W |
输入CM电感2的功率损耗 |
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Pidm= |
5.1 |
W |
输入DM电感的功率损耗 |
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Pbinlf= |
5.7 |
W |
输入阶PCB的功率损耗 |
2 x 1/2 |
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Pidb= |
9.8 |
W |
输入二极管桥的功率损耗 |
1/2*D25XB60 |
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Pisb= |
9.8 |
W |
输入SCR桥的功率损耗 |
1/2*D25XB60 |
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Pinu= |
35.5 |
W |
输入阶总损耗 |
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Tdc= |
105 |
℃ |
二极管外壳温度 |
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Tsc= |
105 |
℃ |
SCR外壳温度 |
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Tdh= |
103 |
℃ |
二极管散热器温度 |
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Tsh= |
103 |
℃ |
SCR散热器温度 |
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Ridthsx= |
5.46 |
℃/W |
最大二极管散热器热阻 |
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Ridths= |
2.25 |
℃/W |
选定二极管散热器热阻 |
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Risthsx= |
5.46 |
℃/W |
最大的SCR散热器热阻 |
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Risths= |
2.25 |
℃/W |
选定的SCR散热器热阻 |
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PFC阶损耗估算 |
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输入数据 |
Vba= |
407.0 |
Vdc |
平均升高电压 |
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fpfc= |
140 |
kHz |
PFC开关频率 |
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Iba= |
6.61 |
A |
平均PFC输入电流 |
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Iba= |
6.81 |
A |
平均PFC输出电流 |
从上面的格中复制 |
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Ibswn= |
6.9 |
Arms |
在额定线上的开关rms电流 |
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Ibpkon= |
7.9 |
Apk |
开关闭合、二极管关断时峰值电流，最大平均值 |
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Ibpkoff= |
16.5 |
Apk |
开关断开、二极管导通时峰值电流，最大平均值 |
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kf= |
1 |
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硬开关为1,
软开关为2 |
硬开关 |
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dIf/dt= |
1,042 |
A/us |
闭合电流斜率，最大值，选择的应小于此值 |
1259 |
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Lsnb= |
0.00 |
uH |
升压缓冲电感 |
不需要 |
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dVd/dton= |
-23.0 |
kV/us |
MOSFET开关闭合时的电压的最大极限dV/dt |
不需要 |
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nd= |
1 |
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升压二极管的数量 |
APT30DS60B |
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Vbd= |
2.83 |
V |
峰值电流时的二极管正向压降 |
APT30DS60B |
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Vbdfr= |
21.00 |
V |
二极管正向恢复电压 |
APT30DS60B |
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tfrx= |
50.0 |
ns |
二极管正向恢复时间 |
APT30DS60B |
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Irrpk= |
21.8 |
A |
升压二极管反向恢复电流峰值 |
APT30DS60B |
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trrx= |
30.0 |
ns |
升压二极管反向恢复时间 |
APT30DS60B |
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ta= |
20.9 |
ns |
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APT30DS60B |
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tb= |
9.1 |
ns |
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APT30DS60B |
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Rthjc= |
0.66 |
℃/W |
升压二极管结到外壳的热阻 |
APT30DS60B |
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Rthcs= |
0.71 |
℃/W |
升压二极管外壳到散热器的热阻 |
APT30DS60B |
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Tjbdx= |
130 |
℃ |
升压二极管最高结温 |
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Tjbd= |
135 |
℃ |
升压二极管结温 |
与BT同样的htsk |
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Tjbd= |
135 |
℃ |
升压二极管结温 |
复制自上面的格 |
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nt= |
2 |
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晶体管数量 |
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Rdso= |
0.070 |
Ohm |
MOSFET Rdson, max @25℃ |
SPW47N60S5 |
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Rds= |
0.072 |
Ohm |
实际的MOSFET(s) Rds ON |
SPW47N60S5 |
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Vgsth= |
6.50 |
V |
栅极阈值电压 |
SPW47N60S5 |
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Vx= |
25.0 |
V |
Vds 电压 @ t3 |
SPW47N60S5 |
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gfs= |
30.0 |
S |
正向跨导 |
SPW47N60S5 |
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Q3= |
6.4 |
nC |
门电压t2 -> t3 |
SPW47N60S5 |
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Cisu= |
8,360 |
pF |
Ciss @ Vds=Vba &
Vgsth<Vgs<Vgsp |
SPW47N60S5 |
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Coer= |
233 |
pF |
MOSFET 输出电容 @ Vba |
SPW47N60S5 |
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rg= |
8.70 |
Ohm |
晶体管寄生门阻抗 |
SPW47N60S5 |
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Ls= |
9.0 |
nH |
源极阻抗 |
SPW47N60S5 |
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Vgson= |
14.0 |
V |
门开启有效电压 |
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Vgsoff= |
-5.0 |
V |
门关断有效电压 |
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Vgst2->3= |
6.81 |
V |
Vgs 从t2b
到 t3 |
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Vgst2->3= |
6.81 |
V |
Vgs 从t2b
到 t3 |
复制于上面的格 |
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Vgst2a= |
6.63 |
V |
Vgs 当 Id=Idiode |
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Vlsta= |
4.69 |
V |
导通时Ls上的电压， t1->t2 |
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t:1->2a= |
7.6 |
ns |
Id从上升到Idiode需要的时间 |
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t:2->3= |
16.6 |
ns |
Vds降低到Vds=Vx的时间 |
硬开关 |
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dVd/dton= |
-23.0 |
kV/us |
MOSFET漏极电压开启时的dV/dt |
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Vsaton= |
0.6 |
V |
导通后的Vdrain |
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Icossf= |
-5.3 |
A |
电压下降时的Coss电流 |
SPW47N60S5 |
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Rswonc= |
10.2 |
Ohm |
门开启电阻 |
取决于 dI/dt |
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Rswon= |
10.0 |
Ohm |
选择的门开启电阻 |
=Rswonc |
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Rswoff= |
0.5 |
Ohm |
选择的门关断电阻 |
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Csf= |
0 |
pF |
最优升压缓冲电容 |
不需要 |
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Csf= |
0 |
pF |
升压缓冲电容 |
不需要 |
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Vsatoff= |
1.2 |
V |
关断前的Vdrain |
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Vgst3r= |
6.78 |
V |
Vds开始上升之前的Vgs
@ t3r |
硬开关 |
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t:3r->2r= |
10.8 |
ns |
Vds=Vx 到Vds=Vb的时间 |
硬开关 |
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dVd/dtoff= |
35.5 |
kV/us |
MOSFET漏极电压关断dV/dt |
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Icossr= |
8.27 |
A |
电压上升时的Coss电流 |
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Icsf= |
0.00 |
A |
电压上升期间的Csf电流 |
不提供 |
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Icht3r->2r= |
0.00 |
A |
内沟道电流 |
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Vgst2r= |
6.50 |
V |
Vgs @ t2r, Vds达到Vb后 |
硬开关 |
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dId/dt= |
-2,013 |
A/us |
关断电流斜率 (内沟道!) |
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t:2r->1r= |
8.2 |
ns |
Ichannel从Id到零的时间 |
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Vlsoff= |
-9.06 |
V |
关断时Ls的电压 |
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Rthjc= |
0.30 |
℃/W |
MOSFET结到外壳的热阻 |
SPW47N60S5 |
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Rthcs= |
0.71 |
℃/W |
MOSFET外壳到散热器的热阻 |
SPW47N60S5 |
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Tjbtx= |
125 |
℃ |
MOSFET最大结温 |
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Tjbt= |
110 |
℃ |
MOSFET实际结温 |
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Resrlf= |
63 |
mOhm |
ESR@100Hz, 升压电容 |
3*470uF |
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Resrhf= |
36 |
mOhm |
ESR@100kHz,升压电容 |
3*470uF |
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Rspfc= |
15.0 |
mOhm |
PFC 分流电阻 |
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Rbpfchf= |
6.4 |
mOhm |
PFC高频是PCB的PCF路径 |
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Pbitl= |
12.4 |
W |
升压电感总损耗 |
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输出数据 |
Pt5= |
3.5 |
W |
MOSFET传导损耗 |
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Pt1->2= |
5.5 |
W |
MOSFET开启损耗 |
硬开关 |
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Pt2a->2b= |
22.4 |
W |
二极管引起的MOSFET开启开关损耗 |
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Pt2->2b= |
5.7 |
W |
二极管引起的MOSFET开启开关损耗 |
MOSFET(s) +
Diode(s) |
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Pt4= |
3.9 |
W |
二极管引起的MOSFET开启关断损耗 |
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Pt5= |
5.4 |
W |
晶体管电容放电损耗 |
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Ptr= |
43.5 |
W |
主开关总损耗 |
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Pdc= |
19.3 |
W |
升压二极管传导损耗 |
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Pdoff= |
1.2 |
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升压二极管开关关断损耗 |
正向恢复 |
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Pd= |
23.3 |
W |
主二极管总损耗 |
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Pdsn= |
2.3 |
W |
缓冲二极管损耗 |
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Pbs= |
69.1 |
W |
PFC阶半导体器件总损耗 |
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Tcbtx= |
118 |
℃ |
MOSFET允许的最大温度 |
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Thpfcx= |
103 |
℃ |
MOSFET允许的散热器最大温度 |
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Tcbd= |
120 |
℃ |
升压二极管温度 |
与BT一样的htsk |
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Rths |
0.77 |
℃/W |
PFC散热器的热阻 |
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Pish= |
1.9 |
W |
PFC分流的功率损耗 |
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Pbpfclf= |
0.8 |
W |
PCB PFC高频通路的功率损耗 |
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Pbo= |
2.0 |
W |
PFC阶其它的总损耗 |
|
|
|
|
| |
Pesrlf= |
1.4 |
W |
升压电容器低频损耗 |
|
|
|
|
| |
Pesrhf= |
2.0 |
W |
升压电容器高频损耗 |
|
|
|
|
| |
Pbt= |
89.5 |
W |
PFC阶总损耗 |
|
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| |
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| |
|
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|
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| |
直流/直流阶损耗计算 |
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| |
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|
输入数据 |
Rdso= |
0.200 |
Ohm |
MOSFET Rds 最大 @25℃ |
APT5020BVFR |
|
|
|
| |
Rdsd= |
0.379 |
Ohm |
MOSFET Rds
导通电阻 @125℃ |
APT5020BVFR |
|
|
|
| |
Rthjc= |
0.11 |
℃/W |
MOSFET
结到外壳热阻 |
4*APT5020BVFR |
|
|
|
| |
Rthcs= |
0.18 |
℃/W |
MOSFET 外壳到散热器热阻 |
4*APT5020BVFR |
|
|
|
| |
Tj= |
125 |
℃ |
MOSFET
最高结温 |
APT5020BVFR |
|
|
|
| |
Tja= |
110 |
℃ |
MOSFET 实际的结温 |
APT5020BVFR |
|
|
|
| |
Coer= |
253 |
pF |
MOSFET 输出电容 @ Vba |
2*APT5020BVFR |
|
|
|
| |
Ibchfx= |
2.69 |
Arms |
直流输入电容，最高HF纹波电流 |
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|
|
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| |
Ibchfx= |
2.69 |
Arms |
直流输入电容，最高HF纹波电流 |
复制于上面的格 |
|
|
|
| |
Resrin= |
36 |
mOhm |
ESR@100kHz, 升压电容器 |
3*470uF |
|
|
|
| |
Rdcm= |
10.00 |
mOhm |
直流阻抗,
直流/直流 CM 电感器 |
|
|
|
|
| |
Rbdcp= |
38.19 |
mOhm |
PCB 直流/直流主极 |
|
|
|
|
| |
Pttl= |
14.9 |
W |
功率变压器总损耗 |
|
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| |
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|
输出数据 |
Pdc= |
43.4 |
W |
相移桥晶体管的传导损耗 |
|
|
|
|
| |
Psw= |
2.2 |
W |
相移桥晶体管的开关损耗 |
|
|
|
|
| |
Ptr= |
45.5 |
W |
桥开关的总损耗 |
|
|
|
|
| |
Tc= |
120 |
℃ |
外壳温度 |
|
|
|
|
| |
Th= |
112 |
℃ |
散热器温度 |
|
|
|
|
| |
Rths |
1.37 |
℃/W |
PS桥散热器热阻 |
|
|
|
|
| |
Pcin= |
0.3 |
W |
输入电容的功率损耗 |
|
|
|
|
| |
Pcin= |
0.0 |
W |
直流/直流CM电感 |
|
|
|
|
| |
Pbdcp= |
2.2 |
W |
PCB直流/直流主级的功率损耗 |
|
|
|
|
| |
Pdctot= |
60.7 |
W |
直流/直流阶总功率损耗 |
|
|
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| |
|
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| |
|
|
|
|
|
|
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|
| |
输出阶损耗计算 |
|
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| |
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|
|
输入数据 |
Rbdcslf= |
0.4 |
mOhm |
PCB直流/直流次级通路，低频 |
|
|
|
|
| |
Rbdcshf= |
2.5 |
mOhm |
PCB直流/直流次级通路，高频 |
|
|
|
|
| |
Rocm= |
0.20 |
mOhm |
直流阻抗，输出CM电感器 |
|
|
|
|
| |
Rodm= |
0.10 |
mOhm |
直流阻抗，输出DM电感器 |
|
|
|
|
| |
Rosh= |
0.49 |
mOhm |
直流阻抗，输出分流 |
|
|
|
|
| |
Rbdco= |
0.57 |
mOhm |
PCB直流/直流输出通路 |
|
|
|
|
| |
Roc= |
1.00 |
mOhm |
直流阻抗，输出联结器 |
|
|
|
|
| |
Poitl |
3.0 |
W |
输出电感器的总损耗 |
|
|
|
|
| |
nrd= |
2 |
|
整流二极管的数量 |
1/2*63CPQ100 |
|
|
|
| |
Ddcn= |
86.84 |
% |
额定直流/直流阶 占空比 |
|
|
|
|
| |
Ddcn= |
86.84 |
% |
额定直流阶占空比 |
复制于上格 |
|
|
|
| |
Vfr= |
0.70 |
V |
二极管正向电压 @ Tja |
1/2*63CPQ100 |
|
|
|
| |
Rthjc= |
0.20 |
℃/W |
输出二极管结到外壳的热阻 |
nrd*63CPQ100 |
|
|
|
| |
Rthcs= |
0.12 |
℃/W |
输出二极管外壳到散热器的热阻 |
nrd*63CPQ100 |
|
|
|
| |
Tj= |
145 |
℃ |
输出二极管最高结温 |
63CPQ100 |
|
|
|
| |
Tja= |
135 |
℃ |
输出二极管实际结温 |
63CPQ100 |
|
|
|
| |
Tc= |
81 |
℃ |
输出二极管外壳温度 |
|
|
|
|
| |
nod= |
4 |
|
OR-ing二极管的数量 |
1/2*STPS6045CW |
|
|
|
| |
Vfo= |
0.59 |
V |
OR-ing二极管的正向电压 @ Tja |
1/2*STPS6045CW |
|
|
|
| |
Rthjc= |
0.24 |
℃/W |
OR-ing二极管结到外壳的热阻 |
nod*1/2*STPS6045CW |
|
|
|
| |
Rthcs= |
0.12 |
℃/W |
OR-ing二极管外壳到散热器的热阻 |
nod*1/2*STPS6045CW |
|
|
|
| |
Tj= |
145 |
℃ |
OR-ing二极管最高结温 |
STPS6045CW |
|
|
|
| |
Tja= |
140 |
℃ |
OR-ing二极管实际结温 |
STPS6045CW |
|
|
|
| |
Resro= |
9 |
mOhm |
输出电容的ESR |
2 x 1800uF/35V |
|
|
|
| |
PLmin= |
2.0 |
W |
负载电阻的最小功耗 |
|
|
|
|
| |
Psnb= |
1.0 |
W |
嵌位电路的功耗 |
|
|
|
|
| |
|
|
|
|
|
|
|
|
|
输出数据 |
Pbdcs= |
5.9 |
W |
直流/直流次级通路的功耗 |
|
|
|
|
| |
Psatind= |
4.0 |
W |
可饱和电感器的功耗 |
|
|